Dinhata College

Dr. Arabinda Barman

E-mail: arabinda.mse@gmail.com
Profile URL :https://vidwan.inflibnet.ac.in//profile/488128
Orcid Id: 0000-0002-3456-8513
Address: Dinhata ,West Bengal,India – 736135

Expertise

Condensed Matter Physics

I am an experimental material science enthusiast. My research interest is on resistive random oxide based memory device, especially metal oxide based memory devices. Recently, I am working on perovskite based memory devices.

Work experience

  1. Dinhata College, Coochbehar 2020 — Present
    Assistant Professor
    Coochbehar
  2. Indian Institute of Technology Kanpur 2010 — 2012
    Project Associate
    Kanpur Nagar

Education

  1. Ph.D. in Physics – 2017
    Shiv Nadar University
  2. Master of Science – 2010
    Assam University
  3. Bachelor of Science (H) – 2008
    University of North Bengal

Honours and Awards

  1. Dr. D. S. Kothary Postdoctoral Fellowship – 2018
    UGC
  2. Institute Postdoctoral Fellowship – 2018
    Indian Institute of Technology Delhi
  3. International Travel Support – 2016
    Science and Engineering Research Board, India

Research Project

Investigation of Resistive Switching Behavior of Lead Free RbSnX3 (X=I, Cl, Br)
Role: Principal Investigator
Year 2021, Amount 1830000

Membership In Professional Bodies

  1. Materials Research Society, USA, 2016
    Subscribed Member

Membership In Committees

  1. UGC Sub committee Dinhata College, 2022
    Co-ordinator

Publication

  1. Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study
    Barman A.;Das D.;Deshmukh S.;Sarkar P.K.;Banerjee D.;Hübner R.;Gupta M.;Saini C.P.;Kumar S.;Johari
    P.;Dhar S.;Kanjilal A.
    ACS Applied Materials and Interfaces, Volume 14, Year 2022, Pages 34822-34834
  2. Thermoelectric properties of Rashba compounds KSnX (X = Sb, Bi)
    Journal of Applied Physics, Year 2022
  3. First-principles study of anisotropic thermoelectric properties of hexagonal KBaBi
    Journal of Solid State Chemistry, Year 2021
  4. Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems
    Siddik A.;Haldar P.K.;Paul T.;Das U.;Barman A.;Roy A.;Sarkar P.K.
    Nanoscale, Volume 13, Year 2021, Pages 8864-8874
  5. Metal-induced progressive alteration of conducting states in memristors for implementing an efficient analog memory: a DFT-supported experimental approach
    Das D.;Barman A.;Sarkar P.K.;Rajput P.;Jha S.N.;Hübner R.;Kanjilal D.;Johari P.;Kanjilal A.
    Journal of Materials Chemistry C, Volume 9, Year 2021, Pages 3136-3144
  6. Aliovalent Doping Engineered Ti1-XTaxO2 6. Layer for Ultra-Low Power Resistive Memory Devices
    ECS Meeting Abstracts, Year 2020
  7. Resistive switching in reactive electrode-based memristor: Engineering bulk defects and interface inhomogeneity through bias characteristics
    Kumar A.;Das M.;Sharma P.;Garg V.;Sengar B.S.;Barman A.;Kanjilal A.;Kranti A.;Mukherjee S.
    Semiconductor Science and Technology, Volume 34, Year 2019
  8. Oxygen mediated phase transformation in room temperature grown TiO2 thin films with enhanced photocatalytic activity
    Banerjee D.;Barman A.;Deshmukh S.;Saini C.;Maity G.;Pradhan S.;Gupta M.;Phase D.;Roy S.;Kanjilal A.
    Applied Physics Letters, Volume 113, Year 2018
  9. Local probing of the enhanced field electron emission of vertically aligned nitrogen-doped diamond nanorods and their plasma illumination properties
    Deshmukh S.;Sankaran K.J.;Srinivasu K.;Korneychuk S.;Banerjee D.;Barman A.;Bhattacharya G.;Phase
    D.M.;Gupta M.;Verbeeck J.;Leou K.C.;Lin I.N.;Haenen K.;Roy S.S.
    Diamond and Related Materials, Volume 83, Year 2018, Pages 118-125
  10. The effect of Ti+ ion implantation on the anatase-rutile phase transformation and resistive switching properties of TiO2 thin films
    Manna A.;Barman A.;Joshi S.R.;Satpati B.;Dash P.;Chattaraj A.;Srivastava S.K.;Sahoo P.K.;Kanjilal
    A.;Kanjilal D.;Varma S.
    Journal of Applied Physics, Volume 124, Year 2018
  11. Probing the impact of energetic argon ions on the structural properties of ZnO:Al/TiO2 heterostructures
    Journal of Applied Physics, Year 2018
  12. Microstructures and immersion corrosion performances of arc sprayed amorphous Al-Ti-Ni coating on S355 structural steel
    Anti-Corrosion Methods and Materials, Year 2018
  13. Resistive switching behavior in oxygen ion irradiated TiO2−xfilms
    Barman A.;Saini C.;Sarkar P.;Bhattacharjee G.;Bhattacharya G.;Srivastava S.;Satpati B.;Kanjilal D.;Ghosh
    S.;Dhar S.;Kanjilal A.
    Journal of Physics D: Applied Physics, Volume 51, Year 2018
  14. Impact of Self-Trapped Excitons on Blue Photoluminescence in TiO2 Nanorods on Chemically Etched Si Pyramids
    Journal of Physical Chemistry C, Volume 121, Year 2017, Pages 11448-11454
  15. Nanoscale self-recovery of resistive switching in Ar+irradiated TiO2-x films
    Barman A.;Saini C.P.;Sarkar P.K.;Das D.;Dhar S.;Singh M.;Sinha A.K.;Kanjilal D.;Gupta M.;Phase
    D.M.;Kanjilal A.
    Journal of Physics D: Applied Physics, Volume 50, Year 2017
  16. Self-decorated Au nanoparticles on antireflective Si pyramids with improved hydrophobicity
    Saini C.P.;Barman A.;Kumar M.;Satpati B.;Som T.;Kanjilal A.
    Journal of Applied Physics, Volume 119, Year 2016
  17. Probing electron density across Ar+ irradiation-induced self-organized TiO2−x nanochannels for memory application
    Barman A.;Saini C.;Sarkar P.;Roy A.;Satpati B.;Kanjilal D.;Ghosh S.;Dhar S.;Kanjilal A.
    Applied Physics Letters, Volume 108, Year 2016
  18. Defect-mediated optical bandgap modulation of self-assembled TiO2nanorods on chemically etched Si pyramids
    Proceedings of the International Conference on Nanotechnology for Better Living, Year 2016
  19. Resistive switching in self-organized TiO2nano-channels for resistive random access memory
    Proceedings of the International Conference on Nanotechnology for Better Living, Year 2016
  20. Multilevel programming in Cu/NiOy /NiOx 20. /Pt unipolar resistive switching devices
    Sarkar P.K.;Bhattacharjee S.;Barman A.;Kanjilal A.;Roy A.
    Nanotechnology, Volume 27, Year 2016
  21. Multilevel resistance state of Cu/La2O3/Pt forming-free switching devices
    Sarkar P.;Prajapat M.;Barman A.;Bhattacharjee S.;Roy A.
    Journal of Materials Science, Volume 51, Year 2016, Pages 4411-4418
  22. Self-organized titanium oxide nano-channels for resistive memory application
    Barman A.;Saini C.P.;Sarkar P.;Satpati B.;Bhattacharyya S.R.;Kabiraj D.;Kanjilal D.;Dhar S.;Kanjilal A.
    Journal of Applied Physics, Volume 118, Year 2015
  23. Improved broadband antireflection in Schottky-like junction of conformal Al-doped ZnO layer on chemically textured Si surfaces
    Saini C.P.;Barman A.;Kumar M.;Sahoo P.K.;Som T.;Kanjilal A.
    Applied Physics Letters, Volume 105, Year 2014
  24. Comparative Studies of Different Methods for Determining Crystallization Kinetics of Metallic Glass
    Barman A.;Chattopadhayay C.;Sangal S.;Mondal K.
    Transactions of the Indian Institute of Metals, Volume 65, Year 2012, Pages 565-570
  25. Impact of Self-Trapped Excitons on Blue Photoluminescence in TiO2 Nanorods on Chemically Etched Si Pyramids
    , Year 0
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